Nonvolatile Memory: Performance‐Enhancing Selector via Symmetrical Multilayer Design (Adv. Funct. Mater. 13/2019).

In article number 1808376, Cheng Song, Feng Pan, and co‐workers report a high‐performance two‐terminal selector based on a symmetrical multilayer structure of homogeneous tantalum oxides, possessing bidirectional threshold switching operation, large selectivity, high compliance currents, and tunable threshold voltages. The selector can realize 1S1R read‐write functions, thus avoiding crosstalk issues, and is stacked with a memristor. The design might advance practical implementation of two‐terminal selectors in the field of emerging memories and neuromorphic computing. [ABSTRACT FROM AUTHOR]