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Low-temperature growth of epitaxial Ti2AlC MAX phase thin films by low-rate layer-by-layer PVD.
- Source :
- Materials Research Letters; Jun2019, Vol. 7 Issue 6, p244-250, 7p
- Publication Year :
- 2019
-
Abstract
- Here we report on the structural and tribo-mechanical characterization of epitaxial single-crystalline Ti<subscript>2</subscript>AlC MAX phase thin films, grown by means of electron beam physical vapor deposition at relatively low temperature (700°C). The growth of phase pure Ti<subscript>2</subscript>AlC at a relatively lower temperature when compared to other PVD methods was achieved utilizing a relatively low deposition rate and layer-by-layer deposition technique. The epitaxial growth is evidenced through the combination of XRD, HR-TEM and Raman spectroscopy measurements. The nanomechanical and micro-scale tribological properties of the Ti<subscript>2</subscript>AlC thin films were studied by means of nanoindentation and nanoscratch tests. The growth temperature of phase pure single-crystalline Ti<subscript>2</subscript>AlC MAX phase thin films was reduced to 700°C utilizing the low-rate layer-by-layer PVD technique. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21663831
- Volume :
- 7
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Materials Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- 135633878
- Full Text :
- https://doi.org/10.1080/21663831.2019.1594428