Cite
Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices.
MLA
Yekan Wang, et al. “Defect Characterization of Multicycle Rapid Thermal Annealing Processed P-GaN for Vertical Power Devices.” ECS Journal of Solid State Science & Technology, vol. 8, no. 2, Feb. 2019, pp. P70–76. EBSCOhost, https://doi.org/10.1149/2.0011902jss.
APA
Yekan Wang, Tingyu Bai, Chao Li, Tadjer, M. J., Anderson, T. J., Hite, J. K., Mastro, M. A., Eddy Jr., C. R., Hobart, K. D., Feigelson, B. N., & Goorsky, M. S. (2019). Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices. ECS Journal of Solid State Science & Technology, 8(2), P70–P76. https://doi.org/10.1149/2.0011902jss
Chicago
Yekan Wang, Tingyu Bai, Chao Li, Marko J. Tadjer, Travis J. Anderson, Jennifer K. Hite, Michael A. Mastro, et al. 2019. “Defect Characterization of Multicycle Rapid Thermal Annealing Processed P-GaN for Vertical Power Devices.” ECS Journal of Solid State Science & Technology 8 (2): P70–76. doi:10.1149/2.0011902jss.