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Impact of annealing on the current conduction and trap properties of CeO2/La2O3 metal-insulator-metal capacitors.

Authors :
Rossetto, Isabella
Piagge, Rossella
Toia, Fabrizio
Spiga, Sabina
Lamperti, Alessio
Vangelista, Silvia
Ritasalo, Riina
Järvinen, Päivi
Ghidini, Gabriella
Source :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Mar2019, Vol. 37 Issue 2, pN.PAG-N.PAG, 5p
Publication Year :
2019

Abstract

This paper focuses on the impact of annealing on the current conduction and trap states of metal-insulator-metal capacitors with CeO<subscript>2</subscript>/La<subscript>2</subscript>O<subscript>3</subscript> dielectrics. Capacitance-frequency measurements identify two main trap levels (T<subscript>1</subscript> and T<subscript>2</subscript>), characterized by an activation energy of 0.2 and 0.3 eV, respectively, and by a time constant of 1 ms and 20 μs at room temperature. The current conduction is found to be ruled by a Poole-Frenkel effect and space charge limited current under positive and negative bias, respectively. Selective annealing of CeO<subscript>2</subscript> and La<subscript>2</subscript>O<subscript>3</subscript> layers clarifies the nature of the aforementioned traps. Although providing no change in the activation energy, an additional annealing of the CeO<subscript>2</subscript> and La<subscript>2</subscript>O<subscript>3</subscript> layer is found to significantly change the trap amplitude of T<subscript>1</subscript> and T<subscript>2</subscript>, respectively. The corresponding change of the current conduction in the region where trap assisted mechanisms play a major role is discussed. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21662746
Volume :
37
Issue :
2
Database :
Complementary Index
Journal :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics
Publication Type :
Academic Journal
Accession number :
135516794
Full Text :
https://doi.org/10.1116/1.5060712