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The impact of Eu3+ ion substitution on dielectric properties of Y3−xEuxAl5O12 (0.00 ≤ x ≤ 0.10) ceramics.

Authors :
Almessiere, M. A.
Unal, B.
Baykal, A.
Ercan, I.
Yildiz, M.
Source :
Journal of Materials Science: Materials in Electronics; Feb2019, Vol. 30 Issue 3, p2489-2500, 12p
Publication Year :
2019

Abstract

This study reported the effect of Eu substitutions on the conductivity and dielectric properties of Y<subscript>3−x</subscript>Eu<subscript>x</subscript>Al<subscript>5</subscript>O<subscript>12</subscript> (0.0 ≤ x ≤ 0.1), YAG:xEu<superscript>3+</superscript>. All products were fabricated by solid state route. The formation of YAG was approved through X-ray diffraction powder diffraction and high-resolution transmission electron microscope. It was found that the lattice parameters are increasing with increase the substitution content due to the difference in ionic radii between Y<superscript>3+</superscript> and Eu<superscript>3+</superscript>. Electrical and dielectric properties of YAG (Y<subscript>3</subscript>Al<subscript>5</subscript>O<subscript>12</subscript>) and YAG:xEu<superscript>3+</superscript> ceramics were investigated extensively for a variety of concentrations (0.00 ≤ x ≤ 0.1) of the substitutional Eu<superscript>3+</superscript> ion from the 4f lanthanide group. The temperature dependence of dielectric loss, dielectric constant, loss tangent and ac/dc conductivity were examined up to 5.0 MHz to understand the electrical and dielectric properties for both doped and undoped YAG ceramics. The experimental results revealed that Eu<superscript>3+</superscript> ion substitutions (especially x = 0.05) in YAG ceramics meaningfully influence the lossy mechanisms, conductivity and dielectric constant which is probably due to the contribution to the conduction mechanism of the 4f-Eu and 3d-Al ions. So, this can be incorporated at the exceptional sites of both O<subscript>h</subscript> (octahedral) and T<subscript>d</subscript> (tetrahedral) symmetries in YAG: xEu<superscript>3+</superscript> ceramics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
30
Issue :
3
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
134970248
Full Text :
https://doi.org/10.1007/s10854-018-0523-x