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Tensile strain effects on C4N3H monolayer: Large Poisson's ratio and robust Dirac cone.

Authors :
Pan, Hongzhe
Zhang, Hongyu
Li, Jianfu
Li, Qingfang
Sun, Yuanyuan
Wei, Mingzhen
Zhu, Hongyang
Wang, Xiaoli
Source :
Applied Physics Letters; 2/18/2019, Vol. 114 Issue 7, pN.PAG-N.PAG, 5p, 4 Graphs
Publication Year :
2019

Abstract

Recently, a novel two-dimensional (2D) metal-free organic material, the C<subscript>4</subscript>N<subscript>3</subscript>H monolayer, has been proposed and predicted to be a 2D Dirac material with high Fermi velocities. Herein, we investigated its mechanical properties and tensile strain effects on its electronic properties based on first-principles calculations. We demonstrated that this material is quite soft with small stiffness constants and can sustain large strains. Compared to many other 2D materials, this material presents a remarkable elastic anisotropy and a large Poisson's ratio, which are very important for strain engineering. We also found that the Dirac cone of this material is very robust against the tensile strains and the Fermi velocity is high. The small stiffness constant, large Poisson's ratio, robust Dirac cone, and high Fermi velocity make the C<subscript>4</subscript>N<subscript>3</subscript>H monolayer a promising material in high-speed flexible electronic devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
114
Issue :
7
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
134888578
Full Text :
https://doi.org/10.1063/1.5067288