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Investigation of Structural and Elastic Stability, Electronic, Magnetic, Thermoelectric, Lattice-Dynamical and Thermodynamical Properties of Spin Gapless Semiconducting Heusler Alloy Zr2MnIn Using DFT Approach.
- Source :
- Journal of Electronic Materials; Mar2019, Vol. 48 Issue 3, p1634-1642, 9p, 1 Diagram, 5 Charts, 6 Graphs
- Publication Year :
- 2019
-
Abstract
- In recent times, spin gapless semiconductors (SGS) have attracted much attention as a promising candidate for spintronics and thermoelectric applications due to their high carrier concentration and good thermoelectric figure of merit. In this paper, we have carried out a systematic theoretical investigation of the structural, elastic, thermal, electronic, magnetic, thermoelectric, lattice dynamical and thermodynamical properties of Zr<subscript>2</subscript>MnIn using density functional theory (DFT) based first principle calculations. The band structure calculation shows indirect band gap in a spin down channel and zero band gap in a spin up channel of valence and conduction bands confirming the spin gapless semiconducting nature of Zr<subscript>2</subscript>MnIn. The structural and dynamical stability of the antiferromagnetic phase of Zr<subscript>2</subscript>MnIn has also been investigated. Magnetization in Zr<subscript>2</subscript>MnIn originates due to the d state electrons of Zr atoms, which follows the Slater Pauling rule: M<subscript>t</subscript> = Z<subscript>t</subscript> − 18. Phonon dispersion curves exhibit real frequency of phonon modes throughout the Brillouin zone, which confirms the dynamical stability of the antiferromagnetic phase of Zr<subscript>2</subscript>MnIn. Thermodynamical properties including specific heat and Debye temperature have been calculated using phonon density of states. A higher value of the thermoelectric figure of merit 1.25, predicts that this alloy as good thermoelectric properties with better output efficiency. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 48
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 134565264
- Full Text :
- https://doi.org/10.1007/s11664-018-06911-y