Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain.

In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (I_ON) and low-level OFF-state current (I_OFF); ambipolar current (I_AMB). In detail, its I_ON is enhanced by 24 times more than that of Si control group and by 6 times more than of SiGe control group. The I_AMB can be reduced by up to 900 times compared with the SiGe control group. In addition, technology computer-aided design (TCAD) simulation is performed to optimize electrical performance. Then, the benchmarking of ON/OFF current is also discussed with other research group's results. [ABSTRACT FROM AUTHOR]