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CONV-SRAM: An Energy-Efficient SRAM With In-Memory Dot-Product Computation for Low-Power Convolutional Neural Networks.

Authors :
Biswas, Avishek
Chandrakasan, Anantha P.
Source :
IEEE Journal of Solid-State Circuits; Jan2019, Vol. 54 Issue 1, p217-230, 14p
Publication Year :
2019

Abstract

This paper presents an energy-efficient static random access memory (SRAM) with embedded dot-product computation capability, for binary-weight convolutional neural networks. A 10T bit-cell-based SRAM array is used to store the 1-b filter weights. The array implements dot-product as a weighted average of the bitline voltages, which are proportional to the digital input values. Local integrating analog-to-digital converters compute the digital convolution outputs, corresponding to each filter. We have successfully demonstrated functionality (>98% accuracy) with the 10 000 test images in the MNIST hand-written digit recognition data set, using 6-b inputs/outputs. Compared to conventional full-digital implementations using small bitwidths, we achieve similar or better energy efficiency, by reducing data transfer, due to the highly parallel in-memory analog computations. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189200
Volume :
54
Issue :
1
Database :
Complementary Index
Journal :
IEEE Journal of Solid-State Circuits
Publication Type :
Academic Journal
Accession number :
134230892
Full Text :
https://doi.org/10.1109/JSSC.2018.2880918