Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs.

MLA

Hubáček, Tomáš, et al. “Advancement toward Ultra-Thick and Bright InGaN/GaN Structures with a High Number of QWs.” CrystEngComm, vol. 21, no. 2, Jan. 2019, pp. 356–62. EBSCOhost, https://doi.org/10.1039/c8ce01830h.

APA

Hubáček, T., Hospodková, A., Kuldová, K., Oswald, J., Pangrác, J., Jarý, V., Dominec, F., Slavická Zíková, M., Hájek, F., Hulicius, E., Vetushka, A., Ledoux, G., Dujardin, C., & Nikl, M. (2019). Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs. CrystEngComm, 21(2), 356–362. https://doi.org/10.1039/c8ce01830h

Chicago

Hubáček, Tomáš, Alice Hospodková, Karla Kuldová, Jiří Oswald, Jiří Pangrác, Vitězslav Jarý, Filip Dominec, et al. 2019. “Advancement toward Ultra-Thick and Bright InGaN/GaN Structures with a High Number of QWs.” CrystEngComm 21 (2): 356–62. doi:10.1039/c8ce01830h.