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Spin-Polarized Transport Behavior Induced by Asymmetric Edge Hydrogenation in Hybridized Zigzag Boron Nitride and Graphene Nanoribbons.

Authors :
Wang, Lihua
Ding, Bingjun
Guo, Yong
Source :
Journal of Electronic Materials; Jan2019, Vol. 48 Issue 1, p321-328, 8p, 3 Diagrams, 5 Graphs
Publication Year :
2019

Abstract

We fused zigzag graphene to boron nitride nanoribbons by gradually doping C atoms at only one edge of the ribbons to design a hybridized ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript> (x + y + z = 12) structure. To create asymmetric edge hydrogenation, the ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript> ribbons were monohydrogenated (N-H) at one edge and dihydrogenated (C-H<subscript>2</subscript>) at the opposite edge, and the structure was subsequently labeled as H-ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript>-H<subscript>2</subscript>. On the basis of density functional theory and non-equilibrium Green's function, our simulation revealed that H-ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript>-H<subscript>2</subscript>-based devices present a variety of abnormal spin-polarized transport properties. When the value of x and y in the H-ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript>-H<subscript>2</subscript> structure is not equal (i.e., z is an odd number), the spin-polarized currents are restricted, regardless of their ferromagnetic (FM) or anti-ferromagnetic (AFM) state. When x is equal to y (i.e., z is an even number), the H-ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript>-H<subscript>2</subscript> structure exhibits negative differential resistance and spin-filtering features in the FM state. Conversely, in the AFM state, the spin-polarized currents of the structure exhibit an exceptional oscillation effect with spin polarization as high as 100% at certain bias voltages. By adjusting the width of graphene and the spin states, the resulting hybridized H-ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript>-H<subscript>2</subscript> structure can be potentially applied to the fabrication of spin nanodevices with exotic functionalities. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
48
Issue :
1
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
133860161
Full Text :
https://doi.org/10.1007/s11664-018-6711-x