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Spin-Polarized Transport Behavior Induced by Asymmetric Edge Hydrogenation in Hybridized Zigzag Boron Nitride and Graphene Nanoribbons.
- Source :
- Journal of Electronic Materials; Jan2019, Vol. 48 Issue 1, p321-328, 8p, 3 Diagrams, 5 Graphs
- Publication Year :
- 2019
-
Abstract
- We fused zigzag graphene to boron nitride nanoribbons by gradually doping C atoms at only one edge of the ribbons to design a hybridized ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript> (x + y + z = 12) structure. To create asymmetric edge hydrogenation, the ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript> ribbons were monohydrogenated (N-H) at one edge and dihydrogenated (C-H<subscript>2</subscript>) at the opposite edge, and the structure was subsequently labeled as H-ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript>-H<subscript>2</subscript>. On the basis of density functional theory and non-equilibrium Green's function, our simulation revealed that H-ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript>-H<subscript>2</subscript>-based devices present a variety of abnormal spin-polarized transport properties. When the value of x and y in the H-ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript>-H<subscript>2</subscript> structure is not equal (i.e., z is an odd number), the spin-polarized currents are restricted, regardless of their ferromagnetic (FM) or anti-ferromagnetic (AFM) state. When x is equal to y (i.e., z is an even number), the H-ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript>-H<subscript>2</subscript> structure exhibits negative differential resistance and spin-filtering features in the FM state. Conversely, in the AFM state, the spin-polarized currents of the structure exhibit an exceptional oscillation effect with spin polarization as high as 100% at certain bias voltages. By adjusting the width of graphene and the spin states, the resulting hybridized H-ZB<subscript>x</subscript>N<subscript>y</subscript>C<subscript>z</subscript>-H<subscript>2</subscript> structure can be potentially applied to the fabrication of spin nanodevices with exotic functionalities. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 48
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 133860161
- Full Text :
- https://doi.org/10.1007/s11664-018-6711-x