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Study on impact ionization in charge layer and multiplication layer of InAlAs/InGaAs SAGCM avalanche photodiodes.
- Source :
- Proceedings of SPIE; 8/30/2018, Vol. 10814, p1-7, 7p
- Publication Year :
- 2018
Details
- Language :
- English
- ISSN :
- 0277786X
- Volume :
- 10814
- Database :
- Complementary Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Conference
- Accession number :
- 133061764
- Full Text :
- https://doi.org/10.1117/12.2502728