Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects.

Abstract: JBS diodes based on 4H-SiC irradiated with electrons and protons are studied. This is carried out by using the methods of capacitance-voltage and current-voltage characteristics. It is concluded that, for both kinds of irradiation, deep centers are formed in the upper half of the band gap of silicon carbide. This leads to a sharp decrease in the concentration of ionized carriers in the conduction band and to an exponential increase in the resistance of the base regions of the structures under study. [ABSTRACT FROM AUTHOR]