On the Apparent Non-Arrhenius Temperature Dependence of Charge Trapping in IIIV/High- ${k}$ MOS Stack.

MLA

Putcha, Vamsi, et al. “On the Apparent Non-Arrhenius Temperature Dependence of Charge Trapping in IIIV/High- ${k}$ MOS Stack.” IEEE Transactions on Electron Devices, vol. 65, no. 9, Sept. 2018, pp. 3689–96. EBSCOhost, https://doi.org/10.1109/TED.2018.2851189.

APA

Putcha, V., Franco, J., Vais, A., Sioncke, S., Kaczer, B., Linten, D., & Groeseneken, G. (2018). On the Apparent Non-Arrhenius Temperature Dependence of Charge Trapping in IIIV/High- ${k}$ MOS Stack. IEEE Transactions on Electron Devices, 65(9), 3689–3696. https://doi.org/10.1109/TED.2018.2851189

Chicago

Putcha, Vamsi, Jacopo Franco, Abhitosh Vais, Sonja Sioncke, Ben Kaczer, Dimitri Linten, and Guido Groeseneken. 2018. “On the Apparent Non-Arrhenius Temperature Dependence of Charge Trapping in IIIV/High- ${k}$ MOS Stack.” IEEE Transactions on Electron Devices 65 (9): 3689–96. doi:10.1109/TED.2018.2851189.