Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays—Part I: Polysilicon-Induced Variability.

MLA

Resnati, Davide, et al. “Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays—Part I: Polysilicon-Induced Variability.” IEEE Transactions on Electron Devices, vol. 65, no. 8, Aug. 2018, pp. 3199–206. EBSCOhost, https://doi.org/10.1109/TED.2018.2838524.

APA

Resnati, D., Mannara, A., Nicosia, G., Paolucci, G. M., Tessariol, P., Spinelli, A. S., Lacaita, A. L., & Monzio Compagnoni, C. (2018). Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays—Part I: Polysilicon-Induced Variability. IEEE Transactions on Electron Devices, 65(8), 3199–3206. https://doi.org/10.1109/TED.2018.2838524

Chicago

Resnati, Davide, Aurelio Mannara, Gianluca Nicosia, Giovanni M. Paolucci, Paolo Tessariol, Alessandro S. Spinelli, Andrea L. Lacaita, and Christian Monzio Compagnoni. 2018. “Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays—Part I: Polysilicon-Induced Variability.” IEEE Transactions on Electron Devices 65 (8): 3199–3206. doi:10.1109/TED.2018.2838524.