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N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications.
- Source :
- Applied Physics Express; Oct2018, Vol. 11 Issue 10, p1-1, 1p
- Publication Year :
- 2018
-
Abstract
- We present the electrical characterization of N-polar AlN layers grown by metal–organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal–semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high buffer leakage current. The silicon concentration decreases from 2 × 10<superscript>18</superscript> to 9 × 10<superscript>15</superscript> cm<superscript>−3</superscript> with decreasing growth temperature, reducing the buffer leakage current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 × 10<superscript>4</superscript> owing to the low leakage of AlN buffer layers. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18820778
- Volume :
- 11
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Applied Physics Express
- Publication Type :
- Academic Journal
- Accession number :
- 132502679
- Full Text :
- https://doi.org/10.7567/APEX.11.101002