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The structural, ferroelectric and optical properties of (Gd, Cr) co-substituted BiFeO3 thin films.

Authors :
Xie, Yanchun
Wu, Xiaohang
Zhang, Yueli
Source :
Journal of Materials Science: Materials in Electronics; Nov2018, Vol. 29 Issue 22, p19155-19163, 9p
Publication Year :
2018

Abstract

Polycrystalline BiFeO<subscript>3</subscript> (BFO) and Bi<subscript>0.9</subscript>Gd<subscript>0.1</subscript>Fe<subscript>1−x</subscript>Cr<subscript>x</subscript>O<subscript>3</subscript> (x = 0, 0.025, 0.05, 0.075, 0.10) multiferroic thin films were fabricated on quartz and Pt(111)/Ti/SiO<subscript>2</subscript>/Si(100) substrates using a sol-gel method. The effects of (Gd, Cr) co-doping on the microstructural, electrical and optical properties of BFO were studied. X-ray diffraction and micro-Raman measurements demonstrated that the phases of all films were a rhombohedral perovskite structure. The merging of (110) and (104) diffraction peaks demonstrated a structural transition in the Bi<subscript>0.9</subscript>Gd<subscript>0.1</subscript>Fe<subscript>1−x</subscript>Cr<subscript>x</subscript>O<subscript>3</subscript> thin films. The field emission scanning electron microscopy (FESEM) patterns exhibited that the grain sizes were decreased and the surface textures got denser and glossier with the increasing Cr content. The Bi<subscript>0.9</subscript>Gd<subscript>0.1</subscript>Fe<subscript>0.95</subscript>Cr<subscript>0.05</subscript>O<subscript>3</subscript> showed a more uniform grain size distribution and denser surface. The leakage current densities and electrical polarizations of (Gd, Cr) co-doped BFO were improved. A minimum leakage current density (5.32 × 10<superscript>−9</superscript> A/cm<superscript>2</superscript>) was obtained in Bi<subscript>0.9</subscript>Gd<subscript>0.1</subscript>Fe<subscript>0.95</subscript>Cr<subscript>0.05</subscript>O<subscript>3</subscript> thin films at the electric field of 300 kV/cm, which decreased by four and five orders of magnitude compared to the BGFO thin film (4.17 × 10<superscript>−5</superscript> A/cm<superscript>2</superscript>) and BFO thin film (6.5 × 10<superscript>−4</superscript> A/cm<superscript>2</superscript>), respectively. And larger polarizations were observed in Bi<subscript>0.9</subscript>Gd<subscript>0.1</subscript>Fe<subscript>0.95</subscript>Cr<subscript>0.05</subscript>O<subscript>3</subscript> thin film. Moreover, the leakage current mechanisms of all films have been studied. The optical band gaps (E<subscript>g</subscript>) of Bi<subscript>0.9</subscript>Gd<subscript>0.1</subscript>Fe<subscript>1−x</subscript>Cr<subscript>x</subscript>O<subscript>3</subscript> thin films were blue-shift with the increasing of x value, which suggested a promising applications in the field of photocatalysis and power electronic devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
29
Issue :
22
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
132272179
Full Text :
https://doi.org/10.1007/s10854-018-0042-9