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An Analog CMOS Silicon Photomultiplier Using Perimeter-Gated Single-Photon Avalanche Diodes.
- Source :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers; Nov2018, Vol. 65 Issue 11, p3830-3841, 12p
- Publication Year :
- 2018
-
Abstract
- Perimeter-gated single-photon avalanche diodes (PGSPADs) have been shown to mitigate premature edge breakdown without unduly increasing the area of the device. PGSPADs are three terminal devices. In this paper, we develop a probability-based SPICE model for the PGSPAD and fully characterize an $18 \times 18$ pixel analog PGSPAD-based CMOS silicon photomultiplier (SiPM). The noise model is derived using theories of carrier thermal generation, carrier diffusion, and inter-band tunneling. Parameters are derived using fabricated PGSPAD devices and model validity is verified with experimental measurements. The designed PGSPAD SiPM is implemented in standard $0.5~\mu \text{m}$ 2-poly, 3-metal CMOS process, and is characterized for dark current, sensitivity, and signal-to-noise ratio (SNR) throughout the visible spectral range for varying bias voltages. Models show that the reduction of dark events in the PGPSAD is primarily caused by a reduction in band-to-band tunneling. Thus, as a function of the applied gate voltage the PGPSAD shows an improvement of SNR over a range of 1 to 1150. The sensitivity of the presented SiPM is $1.06 \times 10^{3}$ A/W/cm2. The designed PGSPAD SiPM shows great promise over standard SiPM for applications, such as neutron detection which requires high sensitivities and high SNRs. [ABSTRACT FROM AUTHOR]
- Subjects :
- COMPLEMENTARY metal oxide semiconductors
PHOTOMULTIPLIERS
AVALANCHE diodes
Subjects
Details
- Language :
- English
- ISSN :
- 15498328
- Volume :
- 65
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers
- Publication Type :
- Periodical
- Accession number :
- 132209236
- Full Text :
- https://doi.org/10.1109/TCSI.2018.2854781