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Correlation of conductivity and magnetization in epitaxial La2/3Ca1/3MnO3 thin films.
- Source :
- Journal of Applied Physics; 6/1/2004, Vol. 95 Issue 11, p6239-6244, 6p, 8 Graphs
- Publication Year :
- 2004
-
Abstract
- We fabricated ∼200 nm thin (001)-oriented films of the ferromagnetic metallic perovskite La<subscript>2/3</subscript>Ca<subscript>1/3</subscript>MnO<subscript>3</subscript> on single crystal (001)-SrTiO<subscript>3</subscript> substrates by dc-sputtering at high oxygen pressure. The samples feature a Curie temperature T<subscript>C</subscript>∼260 K and a magnetic moment μ(T→0 K)∼3 μ<subscript>B</subscript> per Mn atom. The magnetization loops are nearly square-shaped with a coercive field H<subscript>c</subscript>(5 K)=0.03 T that decreases linearly in temperature down to T<subscript>C</subscript>. At low temperature, the magnetization shows a decrease ΔM∼T<superscript>2</superscript> and the resistivity an increase Δρ∼T<superscript>2</superscript> as is expected for itinerant electron ferromagnets where single particle excitations dominate. As a further indication of the high quality of the samples, the resistivity without external magnetic field peaks right at T<subscript>C</subscript> with a maximum value ρ(H=0,T=T<subscript>C</subscript>) of only ∼2 mΩ cm. The magnetoresistance ratio Δρ/ρ<subscript>0</subscript>=[ρ(H,T)-ρ(H=0,T)]/ρ(H=0,T) also reaches its maximum value at T<subscript>C</subscript>, with Δρ/ρ<subscript>0</subscript>(H=6 T,T=T<subscript>C</subscript>)∼-50%. The complete absence of this colossal magnetoresistance effect in the low-temperature limit is a further indication of the high sample quality which may be due to a high degree of oxygenation as a result of our preparation condictions. The relation ρ(H,T)=ρ<subscript>m</subscript>exp[-M(H,T)/M<subscript>0</subscript>] observed below T<subscript>C</subscript> as well as the temperature characteristic of the resistivity above T<subscript>C</subscript> can both be explained by a simple magnetic polaron hopping tunneling model where the tunneling barrier height depends in a simple way on the relative orientation of the local magnetization at both ends of the hopping path. However, here it must be considered that the polarons completely change their character at T<subscript>C</subscript> from large and delocalized to small and highly localized entities. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- ELECTRIC conductivity
MAGNETIZATION
THIN films
EPITAXY
MAGNETISM
PHYSICS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 95
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 13204319
- Full Text :
- https://doi.org/10.1063/1.1711177