Modeling of Nanoscale Gate-All-Around MOSFETs.

Authors :: Jiménez, D.
Sáenz, J. J.
Iñíguez, B.
Suñé, J.
Marsal, L. F.
Pallarès, J.
Source :: IEEE Electron Device Letters; May2004, Vol. 25 Issue 5, p314-316, 3p
Publication Year :: 2004
Abstract: We present a compact physics-based model for the nanoscale gate-all-around MOSFET working in the ballistic limit. The current through the device is obtained by means of the Landauer approach, being the barrier height the key parameter in the model. The exact solution of the Poisson's equation is obtained in order to deal with all the operation regions tracing properly the transitions between them. [ABSTRACT FROM AUTHOR]