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Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes.
- Source :
- IEEE Transactions on Device & Materials Reliability; Sep2018, Vol. 18 Issue 3, p481-483, 3p
- Publication Year :
- 2018
-
Abstract
- Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15304388
- Volume :
- 18
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Device & Materials Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 131629624
- Full Text :
- https://doi.org/10.1109/TDMR.2018.2842253