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Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes.

Authors :
Javanainen, Arto
Vazquez Muinos, Henrique
Nordlund, Kai
Djurabekova, Flyura
Galloway, Kenneth F.
Turowski, Marek
Schrimpf, Ronald D.
Source :
IEEE Transactions on Device & Materials Reliability; Sep2018, Vol. 18 Issue 3, p481-483, 3p
Publication Year :
2018

Abstract

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
15304388
Volume :
18
Issue :
3
Database :
Complementary Index
Journal :
IEEE Transactions on Device & Materials Reliability
Publication Type :
Academic Journal
Accession number :
131629624
Full Text :
https://doi.org/10.1109/TDMR.2018.2842253