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Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate.
- Source :
- Proceedings of SPIE; 9/15/2018, Vol. 10830, p1-6, 6p
- Publication Year :
- 2018
Details
- Language :
- English
- ISSN :
- 0277786X
- Volume :
- 10830
- Database :
- Complementary Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Conference
- Accession number :
- 131415095
- Full Text :
- https://doi.org/10.1117/12.2503624