Impact of stress in ICP-CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs.

Authors :: Cho, S.-J.
Li, X.
Guiney, I.
Floros, K.
Hemakumara, D.
Wallis, D. J.
Humphreys, C.
Thayne, I. G.
Source :: Electronics Letters (Wiley-Blackwell); 7/26/2018, Vol. 54 Issue 15, p947-949, 2p
Publication Year :: 2018
Abstract: The impact of the stress in room temperature inductively coupled plasma chemical vapour deposited (ICP-CVD) SiN<subscript>x</subscript> surface passivation layers on off-state drain (I<subscript>DS-off</subscript>) and gate leakage currents (IGS) in AlGaN/GaN high electron mobility transistors (HEMTs) is reported. I<subscript>DS-off</subscript> and IGS in 2 μm gate length devices were reduced by up to four orders of magnitude to ~10 pA/mm using a compressively stressed bilayer SiN<subscript>x</subscript> passivation scheme. In addition, I<subscript>on</subscript>/I<subscript>off</subscript> of ~1011 and subthreshold slope of 68 mV/dec were obtained using this strain engineered surface passivation approach. [ABSTRACT FROM AUTHOR]

Subjects :: SILICON nitride
SEMICONDUCTORS
INTEGRATED circuit passivation
MODULATION-doped field-effect transistors
TRANSISTORS

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