W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations.

MLA

Aboy, María, et al. “W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations.” Journal of Electronic Materials, vol. 47, no. 9, Sept. 2018, pp. 5045–49. EBSCOhost, https://doi.org/10.1007/s11664-018-6300-z.

APA

Aboy, M., Santos, I., López, P., Marqués, L. A., & Pelaz, L. (2018). W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations. Journal of Electronic Materials, 47(9), 5045–5049. https://doi.org/10.1007/s11664-018-6300-z

Chicago

Aboy, María, Iván Santos, Pedro López, Luis A. Marqués, and Lourdes Pelaz. 2018. “W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations.” Journal of Electronic Materials 47 (9): 5045–49. doi:10.1007/s11664-018-6300-z.