Diamond Diode Structures Based on Homoepitaxial Films.

(m-i-p)-Structures with high-resistance epitaxial i-layers are fabricated on heavily doped p⁺-type substrates with platinum contacts. The structures are studied using several methods: optical and electron microscopy and luminescence, and electrophysical (C-V and I-V characteristics) methods and tested as detectors of ionizing radiation. It is shown that the (m-i-p)-structures are promising for development of several electronic devices (high-voltage diodes, detectors of ionizing radiation, and photovoltaic devices). [ABSTRACT FROM AUTHOR]