Cite
The effect of double doped nc-Si:H tunnel recombination junction in a-Si:H/c-Si tandem solar cells.
MLA
Sunhwa Lee, et al. “The Effect of Double Doped Nc-Si:H Tunnel Recombination Junction in a-Si:H/c-Si Tandem Solar Cells.” Semiconductor Science & Technology, vol. 33, no. 7, July 2018, p. 1. EBSCOhost, https://doi.org/10.1088/1361-6641/aac87f.
APA
Sunhwa Lee, Jinjoo Park, Sangho Kim, Youngkuk Kim, Chaehwan Jeong, & Junsin Yi. (2018). The effect of double doped nc-Si:H tunnel recombination junction in a-Si:H/c-Si tandem solar cells. Semiconductor Science & Technology, 33(7), 1. https://doi.org/10.1088/1361-6641/aac87f
Chicago
Sunhwa Lee, Jinjoo Park, Sangho Kim, Youngkuk Kim, Chaehwan Jeong, and Junsin Yi. 2018. “The Effect of Double Doped Nc-Si:H Tunnel Recombination Junction in a-Si:H/c-Si Tandem Solar Cells.” Semiconductor Science & Technology 33 (7): 1. doi:10.1088/1361-6641/aac87f.