Synthesis, green emission and photosensitivity of Al-doped ZnO film.

Abstract: We report the synthesis and luminescence properties of the pure and Al-doped photosensitive ZnO films by microwave successive ionic layer adsorption reaction. The grain textured growth along c-axis in pure ZnO thin films and those doped with Al was studied by Energy-dispersive X-ray spectroscopy. The Al-doped films show high textured grain growth and high green emission intensity. The structural analysis of the thin films by X-ray diffraction along with scanning electron microscopy and its optical properties (photoluminescence) suggest creation of oxygen vacancy during doping which is responsible for the higher grain growth. The resistance measurements on the ZnO thin films reveal its significance in sensing and such films acts as good components of intelligent solar panels in which the electrical properties can be tuned by electron beam irradiation.Graphical abstract: <graphic></graphic> [ABSTRACT FROM AUTHOR]