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A low temperature gate oxide process for n-channel SiGe modulation doped field effect transistors.
- Source :
- Journal of Applied Physics; 11/1/1997, Vol. 82 Issue 9, p4611, 5p, 1 Black and White Photograph, 1 Chart, 9 Graphs
- Publication Year :
- 1997
-
Abstract
- Investigates the implementation of a low temperature gate oxide to a n-channel SiGe modulation doped field effect transistor (MODFET) fabrication process. Thermal oxidation rate of sputtered a-Si; Checking of the device quality of silicon dioxide; Variation of transconductance with oxide thickness; Yielding of metal-oxide-semiconductor (MOS)-gated SiGe MODFET.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 82
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 13011
- Full Text :
- https://doi.org/10.1063/1.366198