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Current Carrying Capacity of Quasi-1D ZrTe3 Van Der Waals Nanoribbons.

Authors :
Geremew, A.
Bloodgood, M. A.
Aytan, E.
Woo, B. W. K.
Corber, S. R.
Liu, G.
Bozhilov, K.
Salguero, T. T.
Rumyantsev, S.
Rao, M. P.
Balandin, A. A.
Source :
IEEE Electron Device Letters; May2018, Vol. 39 Issue 5, p735-738, 4p
Publication Year :
2018

Abstract

Quasi-1D van der Waals materials, such as transition metal trichalcogenides, have strong covalent bonds in one direction and weaker bonds in cross-plane directions. They can be prepared as crystalline nanowires or nanoribbons consisting of 1D atomic threads, i.e., chains. We have examined the current carrying capacity of ZrTe3 nanoribbons using a set of structures fabricated by the shadow mask method. The bulk crystals were synthesized by the chemical vapor transport method and exfoliated onto Si/SiO2 substrates. It was found that ZrTe3 nanoribbons reveal an exceptionally high current density, on the order of ~100 MA/cm2, at the peak of the stressing DC current. The low-frequency noise was of 1/ ${f}$ type near room temperature ( ${f}$ is the frequency). The noise amplitude scaled with the resistance, following the trend established for other low-dimensional materials. The high current density in ZrTe3 can be attributed to the single-crystal nature of quasi-1D van der Waals materials. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
07413106
Volume :
39
Issue :
5
Database :
Complementary Index
Journal :
IEEE Electron Device Letters
Publication Type :
Academic Journal
Accession number :
130091754
Full Text :
https://doi.org/10.1109/LED.2018.2820140