Contribution to Silicon-Carbide-MESFET ESD Robustness Analysis.

MLA

Phulpin, T., et al. “Contribution to Silicon-Carbide-MESFET ESD Robustness Analysis.” IEEE Transactions on Device & Materials Reliability, vol. 28, no. 6, June 2018, pp. 214–23. EBSCOhost, https://doi.org/10.1109/TDMR.2018.2817255.

APA

Phulpin, T., Isoird, K., Tremouilles, D., Austin, P., Perpinya, X., Leon, J., & Vellvehi, M. (2018). Contribution to Silicon-Carbide-MESFET ESD Robustness Analysis. IEEE Transactions on Device & Materials Reliability, 28(6), 214–223. https://doi.org/10.1109/TDMR.2018.2817255

Chicago

Phulpin, T., K. Isoird, D. Tremouilles, P. Austin, X. Perpinya, J. Leon, and M. Vellvehi. 2018. “Contribution to Silicon-Carbide-MESFET ESD Robustness Analysis.” IEEE Transactions on Device & Materials Reliability 28 (6): 214–23. doi:10.1109/TDMR.2018.2817255.