P‐128: Ultralow Temperature Solution‐processed Al2O3 Gate Dielectrics using Photochemically Activated Nanocluster Precursors.

We report a new strategy for obtaining an ultralow temperature solution derived Al₂O₃ dielectric by using nanoclusters (aluminium‐oxo‐hydroxy cluster, Al‐13) as a precursor and local structure controllable activation process via deep‐ultraviolet (DUV)‐induced photochemical activation. We show that the combination of Al‐13 nanocluster precursor and the spatially controllable photochemical activation enables the formation of highly dense oxide (Al₂O₃) thin films at an ultralow temperature (< 60˚C), through an efficient integration of the dissociated skeleton of the nanocluster precursors. Finally, to demonstrate the versatility of the ultralow‐temperature‐annealed and large area Al₂O₃ dielectrics, metal‐oxide TFTs, carbon nanotube TFTs and integrated circuits were fabricated directly both on ultrathin (thickness < 3 μm) polymeric and low thermal budget stretchable substrates. The metal‐oxide TFTs and 7‐stage ring oscillator circuits showed an average mobility of 5.9 cm² V⁻¹ s⁻¹ with a narrow distribution of the performance and good operational stability, and oscillation frequency greater than 1 MHz with corresponding propagation delay less than 70 ns per stage, respectively. [ABSTRACT FROM AUTHOR]