A graphene integrated highly transparent resistive switching memory device.

Authors :: Dugu, Sita
Pavunny, Shojan P.
Limbu, Tej B.
Weiner, Brad R.
Morell, Gerardo
Katiyar, Ram S.
Source :: APL Materials; 2018, Vol. 6 Issue 5, pN.PAG-N.PAG, 9p
Publication Year :: 2018
Abstract: We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al<subscript>2</subscript>O<subscript>3</subscript>/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (<±1 V). The vertical two-terminal device shows an excellent resistive switching behavior with a high on-off ratio of ∼5 × 10<superscript>3</superscript>. We also fabricated a ITO/Al<subscript>2</subscript>O<subscript>3</subscript>/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al<subscript>2</subscript>O<subscript>3</subscript>/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions. [ABSTRACT FROM AUTHOR]