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Current‐Induced Joule Heating and Electrical Field Effects in Low Temperature Measurements on TIPS Pentacene Thin Film Transistors.
- Source :
- Advanced Electronic Materials; Dec2016, Vol. 2 Issue 12, p1-1, 12p
- Publication Year :
- 2016
-
Abstract
- The channel temperature (T<subscript>ch</subscript>) of solution‐processed 6,13‐bis(triisopropylsilylethynyl)‐pentacene (TIPS pentacene) thin film transistors (TFTs) is closely monitored in real time during current–voltage (I–V) measurements carried out in a He exchange gas cryostat at various base temperatures (T<subscript>b</subscript>) between 300 K and 20 K. This is done using a platinum (Pt) resistance temperature sensor embedded within the transistor channel. Under large gate (V<subscript>g</subscript>) and source‐drain (V<subscript>ds</subscript>) voltage biases, an increase in T<subscript>ch</subscript> is observed, the magnitude of which depends on the thermal conductivity of the substrate. The increase in T<subscript>ch</subscript> is associated with a simultaneous increase in the transistor drain current (I<subscript>d</subscript>) and becomes particularly pronounced at cryogenic T<subscript>b</subscript>. These experimental observations are rationalized using a 1D theoretical model and are attributed to current‐induced Joule heating. However, even though the heating of the channel unquestionably plays an important role, the corresponding amount of increase in I<subscript>d</subscript> at cryogenic T<subscript>b</subscript> and large voltage biases cannot be fully accounted for unless at low temperatures μ<subscript>TIPS</subscript> is enhanced in the presence of strong electrical fields. Therefore it is concluded that the I–V characteristics of TIPS pentacene TFTs at low T<subscript>b</subscript> and large voltage biases are a result of a complex interplay between current‐induced Joule heating and electrical field effects. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 2199160X
- Volume :
- 2
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Advanced Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 129892394
- Full Text :
- https://doi.org/10.1002/aelm.201600163