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Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching.
- Source :
- Physica Status Solidi (B); May2018, Vol. 255 Issue 5, p1-1, 7p
- Publication Year :
- 2018
-
Abstract
- A gallium nitride (GaN) epitaxial layer with a low density of threading dislocations is successfully grown on a silicon substrate by using in situ gas etching. Silicon nitride (SiN<subscript>x</subscript>) film is used as a mask, and ammonia is intermittently supplied in hydrogen ambient during the etching. After etching, high‐density deep pits appeared on the surface of a GaN template layer and corresponded to the threading dislocations in the layer. In this novel method, before growing an additional GaN layer on the template GaN layer, a second SiN<subscript>x</subscript> layer is deposited after the etching process, and this layer prevents GaN nuclei from growing on the upper side‐walls of the pits. By using this method, the density of threading dislocations of the GaN surface is reduced to 6.7 × 10<superscript>7</superscript> cm<superscript>−2</superscript>. This method is cost effective, completing all the necessary processes in one growth run without taking samples out from a metalorganic chemical vapor deposition (MOCVD) reactor. [ABSTRACT FROM AUTHOR]
- Subjects :
- GALLIUM nitride
SILICON
DISLOCATIONS in crystals
AMMONIA
EPITAXIAL layers
ETCHING
Subjects
Details
- Language :
- English
- ISSN :
- 03701972
- Volume :
- 255
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Physica Status Solidi (B)
- Publication Type :
- Academic Journal
- Accession number :
- 129612244
- Full Text :
- https://doi.org/10.1002/pssb.201700387