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Magnetic Diode Behavior at Room Temperature in 2D Honeycombs.

Authors :
Summers, Brock
Dahal, Ashutosh
Singh, Deepak K.
Source :
Advanced Electronic Materials; May2018, Vol. 4 Issue 5, p1-1, 6p
Publication Year :
2018

Abstract

Abstract: The magnetic analog of a semiconductor diode, demonstrating unidirectional electrical transport, is a highly desirable functionality for spintronics application, as it can play a dual role as magnetic memory device and logic element. However, creating such a functional material or device with operation ability at room temperature in the absence of any external tuning parameter, for instance a magnetic field, is a challenge till date. In this study, the finding of semiconductor diode‐type rectification in a 2D honeycomb lattice, made of an ultrasmall permalloy magnet with a typical length of ≈12 nm is reported. The unidirectional electrical transport behavior, characterized by the asymmetric colossal enhancement in differential conductivity at a modest current application of ≈10–15 µA, persists to <italic>T</italic> = 300 K in honeycomb lattice of a moderate thickness of ≈6 nm. Importantly, the unidirectional biasing arises without the application of a magnetic field with an output power, ≈30 nW, by three orders of magnitude smaller than a semiconductor junction diode. Together, these properties provide a new vista for spintronics research. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
2199160X
Volume :
4
Issue :
5
Database :
Complementary Index
Journal :
Advanced Electronic Materials
Publication Type :
Academic Journal
Accession number :
129529529
Full Text :
https://doi.org/10.1002/aelm.201700500