Electrical properties of high energy 120Sn implantation in GaAs.

Authors :: Narsale, Arun
Ali, Yousuf Pyar
Bhambhani, Uma
Salvi, V. P.
Arora, B. M.
Kanjilal, D.
Mehta, G. K.
Source :: Journal of Applied Physics; 11/1/1997, Vol. 82 Issue 9, p4228, 4p, 1 Black and White Photograph, 2 Charts, 5 Graphs
Publication Year :: 1997
Abstract: Discusses the transport properties of high energy 120Sn implanted GaAs and the effect of annealing on the electrical properties of the implanted layer. Formation of two layers at depth of 8.7 and 11 micrometers from the surface of the substrate; Fabrication of Schottky diodes on the implanted substrates; Presence of high series resistance due to radiation defects.