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Tunable luminescence and energy transfer properties in YVO4:Bi3+,Ln3+ (Ln = Dy, Sm, Eu) phosphors prepared by microwave sintering method.

Authors :
Yang, Lixin
Mi, Xiaoyun
Su, Jiangang
Zhang, Xiyan
Bai, Zhaohui
Wang, Nengli
Lin, Jun
Source :
Journal of Materials Science: Materials in Electronics; May2018, Vol. 29 Issue 10, p7941-7951, 11p
Publication Year :
2018

Abstract

YVO<subscript>4</subscript>:Bi<superscript>3+</superscript>,Ln<superscript>3+</superscript> (Ln = Dy, Sm, Eu) phosphors were successful synthesized by microwave sintering method, and characterized by X-ray powder diffraction, scanning electron microscope, photoluminescence spectra, lifetime, quantum efficiency and general structure analysis system structure refinement. Refinement results indicated that the introduced ions occupy the sites of Y<superscript>3+</superscript>. Under 275 nm excitation, the luminescent intensity of YVO<subscript>4</subscript>:Bi<superscript>3+</superscript> samples reach the maximum when Bi<superscript>3+</superscript> concentration is 0.02, the broad excitation spectrum of YVO<subscript>4</subscript>:Bi<superscript>3+</superscript> has a strongest peak at near 343 nm. Doped Bi<superscript>3+</superscript> can effectively improve the emission intensity of YVO<subscript>4</subscript>:Ln<superscript>3+</superscript>. The energy transfer mechanism of Bi<superscript>3+</superscript> → Ln<superscript>3+</superscript> was dipole-quadrupole mechanism of electric multipole interaction. The critical distance (R<subscript>c</subscript>) between Ln<superscript>3+</superscript> and Bi<superscript>3+</superscript> were calculated by concentration quenching method. Emitting color of YVO<subscript>4</subscript>:Bi<superscript>3+</superscript>,Ln<superscript>3+</superscript> phosphors were tunable by adjusting Ln<superscript>3+</superscript> content. In a word, the material has a good application prospects on light emitting diodes. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
29
Issue :
10
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
129181071
Full Text :
https://doi.org/10.1007/s10854-018-8887-5