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Tunable luminescence and energy transfer properties in YVO4:Bi3+,Ln3+ (Ln = Dy, Sm, Eu) phosphors prepared by microwave sintering method.
- Source :
- Journal of Materials Science: Materials in Electronics; May2018, Vol. 29 Issue 10, p7941-7951, 11p
- Publication Year :
- 2018
-
Abstract
- YVO<subscript>4</subscript>:Bi<superscript>3+</superscript>,Ln<superscript>3+</superscript> (Ln = Dy, Sm, Eu) phosphors were successful synthesized by microwave sintering method, and characterized by X-ray powder diffraction, scanning electron microscope, photoluminescence spectra, lifetime, quantum efficiency and general structure analysis system structure refinement. Refinement results indicated that the introduced ions occupy the sites of Y<superscript>3+</superscript>. Under 275 nm excitation, the luminescent intensity of YVO<subscript>4</subscript>:Bi<superscript>3+</superscript> samples reach the maximum when Bi<superscript>3+</superscript> concentration is 0.02, the broad excitation spectrum of YVO<subscript>4</subscript>:Bi<superscript>3+</superscript> has a strongest peak at near 343 nm. Doped Bi<superscript>3+</superscript> can effectively improve the emission intensity of YVO<subscript>4</subscript>:Ln<superscript>3+</superscript>. The energy transfer mechanism of Bi<superscript>3+</superscript> → Ln<superscript>3+</superscript> was dipole-quadrupole mechanism of electric multipole interaction. The critical distance (R<subscript>c</subscript>) between Ln<superscript>3+</superscript> and Bi<superscript>3+</superscript> were calculated by concentration quenching method. Emitting color of YVO<subscript>4</subscript>:Bi<superscript>3+</superscript>,Ln<superscript>3+</superscript> phosphors were tunable by adjusting Ln<superscript>3+</superscript> content. In a word, the material has a good application prospects on light emitting diodes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 29
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 129181071
- Full Text :
- https://doi.org/10.1007/s10854-018-8887-5