Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures.

Details

Language :

English

ISSN :

09538984

Volume :

30

Issue :

17

Database :

Complementary Index

Journal :

Journal of Physics: Condensed Matter

Publication Type :

Academic Journal

Accession number :

128943315

Full Text :

https://doi.org/10.1088/1361-648X/aab818