Ferroelectric PZT Films Without Fatigue Degradation Prepared by MOD Process.

Authors :: Ishchuk, V.M.
Cherginets, V.L.
Demirskaya, O.V.
Aslanov, A.V.
Klitsova, Zh. I.
Teplitskaya, T.S.
Sobolev, V.L.
Source :: Ferroelectrics; 2004, Vol. 298 Issue 1, p135-140, 6p
Publication Year :: 2004
Abstract: Results of studies of the effect of the buffer layer 1.3PbO 0.5ZrO<subscript>2</subscript> 0.5TiO<subscript>2</subscript> (conditional composition is Pb<subscript>1.3</subscript>(Zr<subscript>0.5</subscript>Ti<subscript>0.5</subscript>)O<subscript>3</subscript>) on the properties of Pb(Zr<subscript>0.5</subscript>Ti<subscript>0.5</subscript>)O<subscript>3</subscript> films on Ti and Pt substrates are considered. The films are obtained by metal organic deposition method (MOD). Films deposited on Pt substrate (with the buffer layer or without it) do not show fatigue up to N = 10<superscript>9</superscript> (where N is number of switching cycles) on P<subscript>r</subscript>(N) and E<subscript>c</subscript>(N) dependences. For films deposited on Ti substrates with the intermediate buffer layer P<subscript>r</subscript>(N) dependences demonstrate a basically new feature: after ∼<subscript>10</subscript><superscript>8</superscript> switching cycles the remanent polarization increases. The increase of P<subscript>r</subscript> is 50% at N = 10<superscript>10</superscript>, the increase of coercive field is small. [ABSTRACT FROM AUTHOR]