Back to Search
Start Over
Enhancement of boron solid solubility in Si by point-defect engineering.
- Source :
- Applied Physics Letters; 4/26/2004, Vol. 84 Issue 17, p3325-3327, 3p, 4 Graphs
- Publication Year :
- 2004
-
Abstract
- The technique of point-defect engineering (PDE), with excess vacancies produced near the surface region by MeV Si ion implantation, has been applied to form ultrashallow junctions with sub-keV B implants. PDE can reduce boride-enhanced diffusion that dominates the enhanced diffusion of ultralow energy B implants. PDE can further sharpen the dopant profile and enhance boron activation. For 1×10<superscript>15</superscript>/cm<superscript>2</superscript>, 0.5 keV B implant, B solid solubility has been enhanced over a wide temperature range of 750–1000 °C, with an enhancement factor of 2.5 at 900 °C. These features have enabled a shallower and sharper box-like boron junction achievable by PDE in combination with ultralow energy 0.5 keV B implantation. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- BORON
SILICON
NONMETALS
ION implantation
ION bombardment
ENGINEERING
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 84
- Issue :
- 17
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 12879364
- Full Text :
- https://doi.org/10.1063/1.1711179