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Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure.

Authors :
Zengcheng Li
Bo Feng
Biao Deng
Legong Liu
Yingnan Huang
Meixin Feng
Yu Zhou
Hanmin Zhao
Qian Sun
Huaibing Wang
Xiaoli Yang
Hui Yang
Source :
Journal of Semiconductors; Apr2018, Vol. 39 Issue 4, p1-1, 1p
Publication Year :
2018

Details

Language :
English
ISSN :
16744926
Volume :
39
Issue :
4
Database :
Complementary Index
Journal :
Journal of Semiconductors
Publication Type :
Academic Journal
Accession number :
128735933
Full Text :
https://doi.org/10.1088/1674-4926/39/4/044002