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Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure.
- Source :
- Journal of Semiconductors; Apr2018, Vol. 39 Issue 4, p1-1, 1p
- Publication Year :
- 2018
Details
- Language :
- English
- ISSN :
- 16744926
- Volume :
- 39
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 128735933
- Full Text :
- https://doi.org/10.1088/1674-4926/39/4/044002