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High-Speed InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells.
- Source :
- IEEE Photonics Technology Letters; Feb2018, Vol. 30 Issue 4, p399-402, 4p, 1 Color Photograph, 1 Diagram, 1 Chart, 8 Graphs
- Publication Year :
- 2018
-
Abstract
- We present and discuss the performance characteristics of InP-based p-i-n photodiodes (PDs) with InGaAs/GaAsSb type-II multiple quantum wells absorption regions designed to absorb light at mid-infrared wavelengths. Top-illuminated and waveguide-integrated PDs are fabricated with dark currents as low as 100 nA at −2 V, an external responsivity as high as 0.27 A/Wat 2 μm and 0.3 A/Wat 1.55 μm, and a 3-dB bandwidth of 3.5 GHz at 2 μm. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10411135
- Volume :
- 30
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Photonics Technology Letters
- Publication Type :
- Academic Journal
- Accession number :
- 128721876
- Full Text :
- https://doi.org/10.1109/LPT.2018.2793663