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AlN metal–semiconductor field-effect transistors using Si-ion implantation.
- Source :
- Japanese Journal of Applied Physics; Apr2018, Vol. 57 Issue 4S, p1-1, 1p
- Publication Year :
- 2018
-
Abstract
- We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal–semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 10<superscript>14</superscript> cm<superscript>−2</superscript> exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00214922
- Volume :
- 57
- Issue :
- 4S
- Database :
- Complementary Index
- Journal :
- Japanese Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 128664098
- Full Text :
- https://doi.org/10.7567/JJAP.57.04FR11