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Luminescence and thermal-quenching properties of silicate-based red-emitting K4CaSi3O9:Eu3+ phosphor.

Authors :
Zhao, Lei
Fan, Feiyue
Chen, Xiao
Wang, Yaoan
Li, Yanyan
Deng, Bin
Source :
Journal of Materials Science: Materials in Electronics; Apr2018, Vol. 29 Issue 7, p5975-5981, 7p
Publication Year :
2018

Abstract

A series of novel silicate-based red-emitting K<subscript>4</subscript>Ca<subscript>1−<italic>x</italic></subscript>Si<subscript>3</subscript>O<subscript>9</subscript>:<italic>x</italic>Eu<superscript>3+</superscript> (<italic>x</italic> = 0.01-0.30) phosphors were successfully synthesized via a high-temperature solid-state reaction method for the first time. The compounds were crystallized in the cubic structure with the space group <italic>Pa</italic>3¯<inline-graphic></inline-graphic>. The photoluminescence spectrum of K<subscript>4</subscript>CaSi<subscript>3</subscript>O<subscript>9</subscript>:Eu<superscript>3+</superscript> phosphor shows four peaks assigned to the <superscript>5</superscript>D<subscript>0</subscript>-<superscript>7</superscript>F<subscript>J</subscript> (J = 0, 1, 2, 3 and 4) transitions of Eu<superscript>3+</superscript> upon 396 nm excitation. Judd-Ofelt intensity parameters and CIE were calculated from the photoluminescence data. The quenching temperature for K<subscript>4</subscript>CaSi<subscript>3</subscript>O<subscript>9</subscript>:0.30Eu<superscript>3+</superscript> was estimated to be above 500 K. The superior thermal stability can be attributed to the rigid structure of the host. The good color saturation and high thermal stability indicate that K<subscript>4</subscript>CaSi<subscript>3</subscript>O<subscript>9</subscript>:Eu<superscript>3+</superscript> phosphor is a potential candidate for light-emitting diodes. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
29
Issue :
7
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
128506699
Full Text :
https://doi.org/10.1007/s10854-018-8571-9