Dependence of V\text {TH} Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET.

MLA

Hua, Mengyuan, et al. “Dependence of V\text {TH} Stability on Gate-Bias Under Reverse-Bias Stress in E-Mode GaN MIS-FET.” IEEE Electron Device Letters, vol. 39, no. 3, Mar. 2018, pp. 413–16. EBSCOhost, https://doi.org/10.1109/LED.2018.2791664.

APA

Hua, M., Wei, J., Bao, Q., Zhang, Z., Zheng, Z., & Chen, K. J. (2018). Dependence of V\text {TH} Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET. IEEE Electron Device Letters, 39(3), 413–416. https://doi.org/10.1109/LED.2018.2791664

Chicago

Hua, Mengyuan, Jin Wei, Qilong Bao, Zhaofu Zhang, Zheyang Zheng, and Kevin J. Chen. 2018. “Dependence of V\text {TH} Stability on Gate-Bias Under Reverse-Bias Stress in E-Mode GaN MIS-FET.” IEEE Electron Device Letters 39 (3): 413–16. doi:10.1109/LED.2018.2791664.