Role of plasma-induced defects in the generation of 1/ f noise in graphene.

It has already been reported that 1/<italic>f</italic> noise in graphene can be dominated by fluctuations of charge carrier mobility. We show here that the increasing damage induced by oxygen plasma on graphene samples result in two trends: at low doses, the magnitude of the 1/<italic>f</italic> noise increases with the dose; and at high doses, it decreases with the dose. This behaviour is interpreted in the framework of 1/<italic>f</italic> noise generated by carrier mobility fluctuations where the concentration of mobility fluctuation centers and the mean free path of the carriers are competing factors. [ABSTRACT FROM AUTHOR]