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Application of a Focused, Pulsed X-ray Beam for Total Ionizing Dose Testing of Bipolar Linear Integrated Circuits.
- Source :
- IEEE Transactions on Nuclear Science; Jan2018, Vol. 65 Issue 1, p478-485, 8p
- Publication Year :
- 2018
-
Abstract
- We demonstrate the utility of focused, pulsed X-rays for investigating localized total ionizing dose effects in bipolar analog integrated circuits. Using the LM139 comparator as a test vehicle, we show how the technique can be used to identify the sources of degradation as a result of irradiating different transistors of the device and how this impacts the input bias current, input offset voltage, and output voltage. The 2-D mapping of the sensitive regions of transistors is presented, where the results of localized irradiation impact the monitored operational parameters. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 65
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 127490839
- Full Text :
- https://doi.org/10.1109/TNS.2017.2780827