Back to Search Start Over

Domain-engineered BiFeO thin-film photoanodes for highly enhanced ferroelectric solar water splitting.

Authors :
Song, Jaesun
Kim, Taemin
Lee, Jongmin
Cho, Sam
Cha, Jaeseong
Jeong, Sang
An, Hyunji
Kim, Wan
Jung, Yen-Sook
Park, Jiyoon
Jung, Gun
Kim, Dong-Yu
Jo, Ji
Bu, Sang
Jang, Ho
Lee, Sanghan
Source :
Nano Research; Feb2018, Vol. 11 Issue 2, p642-655, 14p
Publication Year :
2018

Abstract

In photoelectrochemical (PEC) water splitting, charge separation and collection by the electric field in the photoactive material are the most important factors for improved conversion efficiency. Hence, ferroelectric oxides, in which electrons are the majority carriers, are considered promising photoanode materials because their high built-in potential, provided by their spontaneous polarization, can significantly enhance the separation and drift of photogenerated carriers. In this regard, the PEC properties of BiFeO thin-film photoanodes with different crystallographic orientations and consequent ferroelectric domain structures are investigated. As the crystallographic orientation changes from (001) via (110) to (111), the ferroelastic domains in epitaxial BiFeO thin films become mono-variant and the spontaneous polarization levels increase to 110 μC/cm. Consequently, the photocurrent density at 0 V vs. Ag/AgCl increases approximately 5.3-fold and the onset potential decreases by 0.180 V in the downward polarization state. It is further demonstrated that ferroelectric switching in the (111) BiFeO thin-film photoanode leads to an approximate change of 8,000% in the photocurrent density and a 0.330 V shift in the onset potential. This study strongly suggests that domain-engineered ferroelectric materials can be used as effective charge separation and collection layers for efficient solar water-splitting photoanodes. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
19980124
Volume :
11
Issue :
2
Database :
Complementary Index
Journal :
Nano Research
Publication Type :
Academic Journal
Accession number :
127330645
Full Text :
https://doi.org/10.1007/s12274-017-1669-1