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On Using the Volatile Mem-Capacitive Effect of TiO Resistive Random Access Memory to Mimic the Synaptic Forgetting Process.
- Source :
- Journal of Electronic Materials; Feb2018, Vol. 47 Issue 2, p994-997, 4p
- Publication Year :
- 2018
-
Abstract
- In this work, we report on mimicking the synaptic forgetting process using the volatile mem-capacitive effect of a resistive random access memory (RRAM). TiO dielectric, which is known to show volatile memory operations due to migration of inherent oxygen vacancies, was used to achieve the volatile mem-capacitive effect. By placing the volatile RRAM candidate along with SiO at the gate of a MOS capacitor, a volatile capacitance change resembling the forgetting nature of a human brain is demonstrated. Furthermore, the memory operation in the MOS capacitor does not require a current flow through the gate dielectric indicating the feasibility of obtaining low power memory operations. Thus, the mem-capacitive effect of volatile RRAM candidates can be attractive to the future neuromorphic systems for implementing the forgetting process of a human brain. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 47
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 127192529
- Full Text :
- https://doi.org/10.1007/s11664-017-5914-x