Studies on structural and electrical properties in highly crystallized lead-free ferroelectric Ba(Bi 0 . 5 Ta 0.5 )O 3.

A lead free polycrystalline material Ba(Bi0.5Ta0.5)O3was prepared by a standard mixed oxide method using high-purity precursor materials. A preliminary X-ray diffraction study confirmed the formation of a single-phase material, crystallized in monoclinic phase and homogeneous morphology for the sample. The dielectric properties (ϵrandtanδ) have been studied for a wide range of temperature at some selected frequencies. The temperature dependence of relative permittivity suggests that the material may exhibit ferroelectricity of diffuse type around 315°C. The frequency dependence of ac conductivity follows the Jonscher's power lawreveals the material exhibit NTCR behavior similar to that of a semiconductor. [ABSTRACT FROM PUBLISHER]